Stacked semiconductor transistors
US6995473B2 · kind B2 · utility
5Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
At least two switching devices each including a substrate formed of a wide bandgap semiconductor, source and gate electrodes formed in a principal surface side of the substrate, and a drain electrode formed on the back surface of the substrate are stacked so that respective upper surface sides of the switching face each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.