High pass filter using insulated gate field effect transistors
US6995606B2 · kind B2 · utility
5Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2004 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | May 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H11/1291
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high pass filter comprising a combination of capacitors and insulated gate field effect transistors (IGFETs) used as effective resistors provides a low break frequency, while providing improved linearity and a stable break frequency over a relatively wide range of input voltages. The high pass filter can be realized with a small physical size. In one particular embodiment, the small physical size allows the capacitors and the IGFET devices to be integrated together onto a common substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.