Magnetic sensing element comprising antiferromagnetic layer laminated on free magnetic layer
US6995961B2 · kind B2 · utility
8Cited by
14References
49Claims
0Family size
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Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Aug 27, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3909
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Changes of the direction of magnetization at the central region of the free magnetic layer are facilitated by using a layer of a magnetic material having a small exchange stiffness constant such as a NiaFeb layer (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.