Magnetic memory device, write current drive circuit, and write current drive method
US6996001B2 · kind B2 · utility
7Cited by
6References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Mar 2, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a magneto-resistance effect element including a magnetic sensitive layer whose magnetization direction changes according to an external magnetic field; a write line to which a write current is supplied to apply an external magnetic field to the magnetic sensitive layer; and a write current drive circuit including a current direction control section for controlling the direction of the write current in the write line and a current amount control section for controlling the amount of the write current in the write line to a constant value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.