Solid-state devices with radial dopant valence profile
US6996137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2002 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | May 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1681
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16). What is thereby produced is a solid state device (20, 30) in which the concentration of the dopant 16 at the second valence state (b) decreases with radius, the concentration of the dopant (16) at the first valence state (a) increases with radius, and the sum of these concentrations remains constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.