Using deuterated source gases to fabricate low loss GeSiON and SiON waveguides
US6996320B2 · kind B2 · utility
0Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jun 30, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.