Gas sensor and fabrication method thereof
US6997040B1 · kind B1 · utility
11Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2000 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor includes a silicon substrate provided with a recess, an insulating layer, a first and a second conductive patterned layers and a detecting portion for sensing a gas which passes there through. In the gas sensor, the insulating layer is formed on a top portion of the silicon substrate which does not form the recess. The first and the second conductive patterned layers extend over the recess, thereby being apart from the silicon substrate physically. The detecting portion is formed on both portions of the first and the second conductive patterned layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.