Use of doped silicon dioxide in the fabrication of solar cells

US6998288B1 · kind B1 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• David D. Smith · Dublin, US
• Michael Cudzinovic · Sunnyvale, US
• Keith McIntosh · Mona Vale, AU
• Bharatkumar Gamanlal Mehta · Austin, US

Key dates

• Filing date: Sep 21, 2004
• Grant date: Feb 14, 2006
• Expiry date: Sep 21, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.