Method for creating neo-wafers from singulated integrated circuit die and a device made according to the method
US6998328B2 · kind B2 · utility
0Cited by
5References
6Claims
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Inventor
Key dates
| Filing date | Nov 5, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Nov 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A neo-wafer made from integrated circuit die and methods for making a neo-wafer are disclosed. Recesses are formed on a substrate and a dielectric layer with conductive pads is created for the receiving of one or more die. Die are flip-chip bonded to the conductive pads and all voids under-filled. The neo-wafer is thinned to expose the dielectric and the conductive pads exposed, creating a neo-wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.