Flash memory device and a fabrication process thereof, method of forming a dielectric film
US6998355B2 · kind B2 · utility
8Cited by
11References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2004 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Jul 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.