Thin film transistor structure
US6998640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Dec 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
The invention provides a method of manufacturing a thin film transistor capable of reducing the induced photo-electric current and thus improving the quality of the liquid crystal display, and reducing the number of required photo masks saving on the cost of fabrication. A stack structure is formed first, by successively depositing a gate electrode, a first insulation layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer. Subsequently, a second insulation layer is deposited on the substrate, and the photoresist layer and the second insulation layer on the photoresist layer are removed in a lift-off process. Last, a source electrode, a drain electrode, a passivation layer, and a transparent electrode layer, are formed to complete the thin film transistor process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.