Large area photodiode
US6998659B2 · kind B2 · utility
12Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Mar 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40–60 μm, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4–6 μm. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.