Semiconductor device
US6998680B2 · kind B2 · utility
9Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Jan 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A semiconductor device, namely a lateral MOSFET, facilitates to reduce the on-resistance per unit area. The lateral MOSFET exhibiting a high breakdown voltage includes a semiconductor substrate of a first conductivity type, trenches formed in semiconductor substrate and aligned in the channel in the width direction of the MOSFET, a drain drift region of a second conductivity type surrounding the trenches from the side of the side walls and bottom walls thereof, an insulator in each trench, and a region doped with an impurity of the first conductivity type and extending between the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.