Semiconductor device having a mushroom gate with hollow space
US6998695B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 28, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Jan 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device has the steps of: forming a mushroom gate traversing an active region of a semiconductor substrate and having a fine gate and an expanded over gate formed thereon; coating a first organic material film on the semiconductor substrate; patterning the first organic material film and leaving the first organic material film only near the mushroom gate; coating a second organic (insulating) material film covering the left first organic material film; forming an opening through the second organic material film to expose the first organic material film; and dissolving and removing the first organic material film via the opening to form a hollow space in the second organic material film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.