Plasmon assisted enhancement of organic optoelectronic devices
US6999222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2101/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Optoelectronic devices and methods for their fabrication having enhanced and controllable rates of the radiative relaxation of triplet light emitters are provided exemplified by organic light emitting devices based on phosphorescent materials with enhanced emission properties. Acceleration of the radiative processes is achieved by the interaction of the light emitting species with surface plasmon resonances in the vicinity of metal surfaces. Non-radiative Förster-type processes are efficiently suppressed by introducing a transparent dielectric or molecular layer between the metal surface and the chromophore. For materials with low emission oscillator strengths (such as triplet emitters), the optimal separation distance from the metal surface is determined, thus suppressing energy transfer and achieving a significant acceleration of the emission rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.