MIM multilayer capacitor
US6999298B2 · kind B2 · utility
11Cited by
27References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Sep 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a high-performance, RF-capable MIM capacitor structure and process for the manufacture thereof, which are compatible with discrete or integrated processes. The invention is compatible with standard semiconductor processing techniques and provides increased capacitance per unit area for a wide variety of capacitor requirements. The invention exploits vertical dimensions, reduces the chip area required for capacitors, and facilitates the use of advanced materials, such as high-k dielectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.