Non-volatile semiconductor memory device and electric device with the same
US6999344B2 · kind B2 · utility
75Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Mar 11, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5643
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes: a memory cell array in which electrically rewritable floating gate type memory cells are arranged; and a plurality of sense amplifier circuits configured to read data from the memory cell array, wherein each the sense amplifier circuit is configured to sense cell data of a first memory cell selected from the memory cell array under a read condition determined in correspondence with cell data of a second memory cell adjacent to the first memory cell and written after the first memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.