Method of manufacturing a magnetic tunnel junction device
US7001777B1 · kind B1 · utility
2Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2000 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Jan 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.