Chemical vapor deposition material and chemical vapor deposition
US7002033B1 · kind B1 · utility
7Cited by
5References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 25, 2005 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Jul 25, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F15/0053
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, A high-quality ruthenium film even when it is very thin can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.