Method and system for single ion implantation
US7002166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Sep 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31788
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.