Thin film transistor and use of same
US7002181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a thin film transistor capable of controlling gray level of an organic LED element by discretely controlling current levels, a method of manufacturing the thin film transistor, an array substrate including the thin film transistor, a display device, and a method of driving the display device. The thin film transistor includes an active layer formed on an insulating substrate, a plurality of insulating layers formed oppositely to each other with the active layer interposed therebetween, a first gate electrode and a second gate electrode formed adjacently to the insulating layers, respectively, and wiring connected to the first and second gate electrodes, respectively, the wiring controlling respective potentials of the first and second gate electrodes independently of each other. The area of the first gate electrode is different from the area of the second gate electrode, and current levels can be discretely controlled in at least four levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.