Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses
US7002188B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 29, 2003 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Oct 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
A laser-activated semiconductor switching device includes a semiconductor assembly including a multi-layer semiconductor structure having a first principal surface, and a laser assembly. The laser assembly includes at least one laser device and is directly connected to said first principal surface. The first principal surface includes a window area from which a metallization layer and an emitter layer of the semiconductor assembly are masked, such that laser light emitted from the laser assembly impinges through the window area directly onto a base layer of said semiconductor assembly to initiate current conduction by said switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.