Controlled selectivity etch for use with optical component fabrication

US7005247B1 · kind B1 · utility

Assignee

• Kotusa, Inc. · US

Inventors

• Joan Fong · San Marino, US
• Wei Qian · Torrance, US
• Dawei Zheng · Irvine, US
• Zhian Shao · Torrance, US
• Lih-Jou Chung · Anaheim, US
• Xiaoming Yin · Tangxia, CN

Key dates

• Filing date: Jan 15, 2003
• Grant date: Feb 28, 2006
• Expiry date: Jan 3, 2024

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/121
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of fabricating an optical component includes forming a mask on an optical component precursor. The method also includes etching through at least a portion of the mask so as to etch an underlying medium concurrently with remaining mask and transfer a feature of an upper surface of the mask onto an upper surface of the underlying medium. The etch can be configured such that a ratio of the underlying medium etch rate to the mask etch rate is less than about 1.5:1. In some instances, the underlying medium is silicon and the mask is a photoresist.