Ultra low voltage CMOS image sensor architecture
US7005626B2 · kind B2 · utility
9Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2002 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Nov 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
Abstract
A pixel element for an image sensor comprising, a photodiode and a reset transistor connected to an input node, wherein said reset transistor is a PMOSFET connected between said input node and the supply voltage, and wherein said pixel further comprises parallel complementary signal paths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.