Organic thin film transistor comprising multi-layered gate insulator
US7005674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2004 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Mar 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.