Semiconductor device with an improved transmission line
US7005726B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with integrated circuits includes superimposed layers provided at different levels on a substrate, and including a metal strip (3) formed in a reference layer and through which an electric current passes, a metal ground plane (4) formed in a layer situated at a level lower than the reference layer and having a slit (5) which lies below the strip while running alongside it, an electrostatic shield (6) formed in a layer located at a level lower than the ground plane and comprising a multiplicity of spaced out bands (7), made of an electrically-conducting material, that extends across the slit, and conducting junctions (4a, 4b) making it possible to electrically connect the ends of each band to the parts of the ground plane situated on either side of its slit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.