Hybrid write mechanism for high speed and high density magnetic random access memory
US7006375B2 · kind B2 · utility
157Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jun 6, 2003 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Mar 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of writing to a magnetic random access memory comprising: producing a magnetic field along a magnetically hard axis of a free layer of a magnetoresistive element; and passing current through the magnetoresistive element to change a direction of magnetization of the free layer by spin momentum transfer. A magnetic random access memory that operates in accordance with the method is also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.