Semiconductor laser device and optical fiber amplifier using the same
US7006545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2001 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Sep 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 μm is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.