Method for manufacturing a semiconductor device
US7008834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2004 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | May 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes: forming a first photoresist pattern on a second hard mask by use of ArF; forming first and second openings in the second hard mask by use of the first photoresist pattern as an etching mask; forming third and fourth openings in a first hard mask under the first and second openings; forming a partial trench (first trench) and a trench for a full trench (second trench) in an SOI substrate (semiconductor substrate) under the first and second openings; and forming the trench for a full trench into a full trench by etching the trench for a full trench through the fourth opening exposed through a third window of a second photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.