Method to provide a triple well in an epitaxially based CMOS or BiCMOS process

US7008836B2 · kind B2 · utility

Assignee

• Infineon Technologies Wireless Solutions Sweden AB · SE

Inventors

• Patrik Algotsson · Stockholm, SE
• Karin Andersson · Stockholm, SE
• Hans Norstrom · Solna, SE

Key dates

• Filing date: Mar 26, 2004
• Grant date: Mar 7, 2006
• Expiry date: Mar 26, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/859

Abstract

A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.