Substrate manufacturing method
US7008860B2 · kind B2 · utility
10Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2004 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer (12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer (12) to form an ion-implanted layer (13). The insulating layer (12) is thinned down to form a thin insulating layer (12a). A thus prepared first substrate is placed on a second substrate (20) to form a bonded substrate stack (30). After that, the bonded substrate stack (30) is split at the ion-implanted layer (13).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.