Utilization of an ion gauge in the process chamber of a semiconductor ion implanter
US7009193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Feb 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.