Light-emitting thyristor and self-scanning light-emitting device
US7009221B2 · kind B2 · utility
4Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Apr 23, 2004 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Apr 23, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
Abstract
A light-emitting thyristor having an improved luminous efficiency is provided. According to the light-emitting thyristor, a p-type AlGaAs layer and an n-type AlGaAs layer are alternately stacked to form a pnpn structure on a GaAs buffer layer formed on a GaAs substrate, and Al composition of the AlGaAs layer just above the GaAs buffer layer is increased in steps or continuously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.