Patent · US Expired

Semiconductor device with a cavity therein and a method of manufacturing the same

US7009273B2 · kind B2 · utility

70Cited by
5References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 19, 2003
Grant dateMar 7, 2006
Priority date
Expiry dateSep 19, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/213
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.