Differential pressure sensor
US7010984B2 · kind B2 · utility
8Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2004 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/065
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The differential pressure sensor is formed of a semiconductor substrate (1) which is thinned out in an inner region into a membrane (2) which may be impinged by pressure on both sides. Measurement resistances (3a to 3d) for detecting the differential pressure (P1 minus P2) are formed within the membrane (2), and compensation resistances (4) are formed on the carrier, which are connected to measurement resistances (3). The measurement resistances (3) are connected into a first measurement bridge (6) and the compensation resistances (4a to 4d) into a second measurement bridge (7).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.