Oxide sintered body
US7011691B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 2003 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | May 20, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An oxide sintered body is composed mainly of indium and containing tungsten, has a resistivity of no more than 1 kΩcm. The tungsten content in terms of the W/In atomic ratio is preferably at least 0.001 and no more than 0.17. The oxide sintered body comprise mainly a bixbyite structure indium oxide crystal phase containing tungsten in a solid solution and/or an indium tungstate compound crystal phase, with no tungsten oxide crystal phase present, whereby an oxide sintered body for use as a sputtering target is provided for an oxide based transparent conductive film with low resistance and excellent transmission characteristics for the infrared light region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.