Magnetic transparent conducting oxide film and method of making
US7011732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2004 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | May 25, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12736
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 Ω·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.