Partially etched dielectric film with conductive features
US7012017B2 · kind B2 · utility
17Cited by
17References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2004 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Mar 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0369
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.