Diode
US7012308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Dec 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
A diode which eliminates generation of local avalanche breakdown phenomenon when static surges in the backward direction are applied and withstands electrostatic breakdown. A P-type impurity diffused region of high concentration as an anode and an N-type impurity diffused region of high concentration as a cathode that surrounds the P-type impurity diffused region, are formed on the surface of an N-type silicon well region. The surface of the N-type silicon well region on which the impurity diffused regions are formed is covered with an interlayer dielectric, and a metal interconnect layer is formed thereon, to spread to the border line of the N-type impurity diffused region and is electrically connected to the P-type impurity diffused region. Accordingly, a P-type inversion layer IP is uniformly formed in a separation area between the impurity diffused regions when static surges in the backward direction are applied, preventing local avalanche breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.