Semiconductor devices with reduced active region defects and unique contacting schemes
US7012314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2003 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (D planarizing the top of the device to remove all epitaxial regions that extend above the top of the cladding layer, thereby making the top of the first predetermined region grown in the second opening essentially flush with t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.