Process and apparatus for plasma activated depositions in a vacuum
US7014889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2001 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T50/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.