Patent · US Expired

Process and apparatus for plasma activated depositions in a vacuum

US7014889B2 · kind B2 · utility

12Cited by
7References
35Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 23, 2001
Grant dateMar 21, 2006
Priority date
Expiry dateMar 14, 2022

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02T50/60
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.