Thin-film gas diffusion electrode and the method for making the same
US7014943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2003 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53204
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This specification discloses a thin-film gas diffusion electrode (GDE) and the method for making the same. The thin-film GDE is formed in a unitary way. A dual-nature porous thin film is used as the substrate. A surface processing is performed to make one surface of the thing film hydrophlic while the other surface hydrophobic. The hydrophlic area serves as the active layer for electrochemical reactions after chemical processing. The hydrophobic area is kept dry to form a smooth gas channel, functioning as a gas diffusion layer. In this method, the thin-film GDE is free from the use of binders and high-temperature high-pressure manufacturing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.