Methods of processing of gallium nitride
US7015117B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2004 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Jul 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for improving thermal dissipation in large gallium nitride light emitting diodes includes replacing sapphire with a better thermal conductor resulting in more efficient removal of thermal energy. A method for achieving a reliable and strong temporary bond between a GaN epitaxial layer and a support wafer. A method for transferring an epitaxial film from a growth substrate to a secondary substrate. An excimer laser initiates film delamination from the growth substrate. The laser beam is shaped by a shadow mask and aligned to an existing pattern in the growth substrate. A method for fabricating a LED that radiates white spectrum light. A phosphor that radiates a white spectrum after excitation in the blue or UV spectrum onto the GaN epitaxial wafer prior to die separation and packaging. A method for depositing a metal substrate onto a GaN epitaxy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.