Self-aligned and self-limited quantum dot nanoswitches and methods for making same
US7015497B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2003 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Aug 27, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/933
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a method for forming quantum tunneling devices comprising the steps of: (1) providing a quantum well, the quantum well comprising a composite material, the composite material comprising at least a first and a second material; and (2) processing the quantum well so as to form at least one segregated quantum tunneling structure encased within a shell comprised of a material arising from processing the composite material, wherein each segregated quantum structure is substantially comprised of the first material. The present invention also comprises additional methods of formation, quantum tunneling devices, said electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.