Split source RF MOSFET device
US7015545B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2002 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Jun 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.