Semiconductor sensing device using different resistance types
US7015706B2 · kind B2 · utility
2Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2004 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Feb 21, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/065
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensing device has a semiconductor substrate with a pressure sensing bridge circuit including piezo-resistance elements formed on the substrate. Further, the semiconductor sensing device has a temperature sensing bridge circuit including resistance elements formed on the semiconductor substrate. A pair of the resistance elements is connected with a power supply terminal, and the other pair of the resistance elements is connected with a grounding terminal. The resistance elements in either or both of these pairs are formed of different resistance types from each other and of the same conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.