Three-transistor refresh-free pipelined dynamic random access memory
US7016246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Apr 14, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4076
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes first circuit RFPDRAM including memory cells and operating in response to first clock signal, second circuit and third circuit coupled with first circuit and bus coupling first circuit to second and third circuits. The second circuit outputs in response to second clock signal, first address signal to first circuit. The third circuit outputs in response to third clock signal, second address signal to first circuit. The first circuit includes refresh control circuit executing refresh operation for memory cells in response to fourth clock signal and address latch for storing first or second address signal in response to first clock signal. The first clock signal has frequency equal to or more than sum of frequencies respectively of second, third, and fourth clock signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.