Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device
US7017430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N2 gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H2+97 vol % N2 to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H2O and residual O2 in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H2O and residual O2 in an exhaust gas are measured by sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.