Fine structure and devices employing it
US7018783B2 · kind B2 · utility
17Cited by
8References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | May 21, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to form three or more steps on a substrate with high precision, a first mask is formed to an area on the substrate corresponding with every other step, and also etching is performed on the area of the substrate to which the first mask is not formed, a second mask is formed to an area on the substrate to which the first mask has not been formed, and also etching is performed on the area on the substrate to which the first and the second masks are not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.