Gallium arsenide HBT having increased performance and method for its fabrication

US7019383B2 · kind B2 · utility

Assignee

• Skyworks Solutions, Inc. · US

Inventors

• Peter J. Zampardi, Jr. · Newbury Park, US
• Kevin Choi · Thousand Oaks, US
• Lance G. Rushing · Oxnard, US

Key dates

• Filing date: Feb 26, 2003
• Grant date: Mar 28, 2006
• Expiry date: Feb 26, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

According to one exemplary embodiment, a gallium arsenide heterojunction bipolar transistor comprises a collector layer and a first spacer layer situated over the collector layer, where the first spacer layer is a high-doped P+ layer. For example, the first spacer layer may comprise GaAs doped with carbon. The gallium arsenide heterojunction bipolar transistor further comprises a base layer situated over the first spacer layer. The base layer may comprise, for example, a concentration of indium, where the concentration of indium is linearly graded in the base layer. The base layer may comprise InGaAsN, for example. The gallium arsenide heterojunction bipolar transistor further comprises an emitter layer situated over the base layer. The emitter layer may comprise, for example, InGaP.